Photoluminescence properties of GaAsBi single quantum wells with 10% of Bi

نویسندگان

چکیده

A set of single quantum well (SQW) samples GaAs 1- x Bi with ~ 0.1 and p -doped barriers grown by molecular beam epitaxy was investigated the temperature-dependent photoluminescence (PL) spectroscopy. Those GaAsBi SQW structures showed a high crystalline quality, smooth surface sharp interfaces between layers exhibited PL intensity lower than 100 meV linewidth QW structures. Temperature dependence optical transition energy S-shape-free for all it weaker that GaAs. An analysis carrier recombination mechanism also carried out indicating radiative is dominant even at room temperature. Moreover, numerical calculations revealed higher Be doping concentration leads to an increased overlap electron heavy hole wave functions determines intensity.

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ژورنال

عنوان ژورنال: Lithuanian Journal of Physics

سال: 2021

ISSN: ['1648-8504', '2424-3647']

DOI: https://doi.org/10.3952/physics.v61i2.4442